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Please use this identifier to cite or link to this item: http://hdl.handle.net/123456789/1246

Title: Electrical resistivity and the Neel point of Mnl00-xCrx thin films
Authors: Boakye, F.
Adanu, K. G.
Issue Date: 8-Sep-2000
Abstract: Electrical resistivity measurements have been carried out on thermal evaporated Mnl00-xCrx (x = 0.5,1,2, ) thin films between 300 and 1.4 K using the van der Pauw four probe technique. A resemblance of the resistivity-temperature behaviour typical of the bulk a-Mn-Rich. specimen is obtained with the 0.5 at.'% Cr in Mn. The Neel point of this specimen is shifted to 83 ± I K from the known value of 90 ± I K for a-Mn. The Neel point is shifted further to lower values as the concentration of Cr in Mn increases. The low temperature resistivity minimum may be interpreted as due to the presence of Cr impurities in the Mn film giving rise to a distortion of the magnetic moment of the manganese atoms and thus leading to spin fluctuation scattering of the conduction electrons. Keywords: Resistivity: Spin fluctuation; Magnetic moment
Description: This article was published by Elsevier Ltd in 2000.
URI: http://hdl.handle.net/123456789/1246
Appears in Collections:College of Science

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