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Please use this identifier to cite or link to this item: http://hdl.handle.net/123456789/14936

Title: Conduction Mechanised In Amophorus As2S3
Authors: Ampong, Francis Kofi
Nkum, R. K.
Boakye, F.
Keywords: Amorphous semiconductor,
mobility edge
hopping,
Issue Date: 2012
Publisher: Journal of Science and Technology
Citation: Journal of Science and Technology,2012
Abstract: The conduction mechanism in amorphous As2S3 has been studied by investigating the variation of the electrical resistivity over the temperature range 300 – 450 K. The electrical resistivity is characterised by a mobility gap of 2.15 eV over the temperature range investigated. The dc conductivity provides evidence of conduction by excitation of charge carriers into the band edges near the mobility edges. The results also give the possibility of conduction by a phonon-assisted hopping of polarons between localised states
Description: This article is published at Journal of Science and Technology, and also available at dx.doi.org/10.4314/just.v32i3.2
URI: http://dx.doi.org/10.4314/just.v32i3.2
http://hdl.handle.net/123456789/14936
Appears in Collections:College of Engineering

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