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Journal of Science and Technology 1988 -1999 >
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http://hdl.handle.net/123456789/5028
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| Title: | Study of Hot-Carrier Induced Degradation in Delta-Doped and Conventional Mosfets |
| Authors: | Diawuo, Kwesi |
| Keywords: | Reliability,
Delta-doped,
Conventional,
MOSFET,
Subthreshold,
Transcon¬ductance
Stress,
2-D (Two Dimensional) |
| Issue Date: | 2000 |
| Publisher: | Journal of Science and Technology |
| Citation: | Journal of Science and Technology,Vol 20, No.1,2 & 3 |
| Abstract: | A DC stress analysis has been performed to assess the reliability of delta-doped and conventional MOSFET's. The experimental results and 2-D Computer simulations indicate that there is little variations in the threshold voltage, trans-conductance and draw current m the delta-MOSFET due to stress than in the conventional MOSFET. |
| Description: | Article Published in the Journal of Science and Technology, Vol.20, No.1,2&3 2000. |
| URI: | http://hdl.handle.net/123456789/5028 |
| Appears in Collections: | Journal of Science and Technology 1988 -1999
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