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Please use this identifier to cite or link to this item: http://hdl.handle.net/123456789/5028

Title: Study of Hot-Carrier Induced Degradation in Delta-Doped and Conventional Mosfets
Authors: Diawuo, Kwesi
Keywords: Reliability,
Delta-doped,
Conventional,
MOSFET,
Subthreshold,
Transcon¬ductance
Stress,
2-D (Two Dimensional)
Issue Date: 2000
Publisher: Journal of Science and Technology
Citation: Journal of Science and Technology,Vol 20, No.1,2 & 3
Abstract: A DC stress analysis has been performed to assess the reliability of delta-doped and conventional MOSFET's. The experimental results and 2-D Computer simulations indicate that there is little variations in the threshold voltage, trans-conductance and draw current m the delta-MOSFET due to stress than in the conventional MOSFET.
Description: Article Published in the Journal of Science and Technology, Vol.20, No.1,2&3 2000.
URI: http://hdl.handle.net/123456789/5028
Appears in Collections:Journal of Science and Technology 1988 -1999

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