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Title: | Study of Hot-Carrier Induced Degradation in Delta-Doped and Conventional Mosfets |
Authors: | Diawuo, Kwesi |
Keywords: | Reliability, Delta-doped, Conventional, MOSFET, Subthreshold, Transcon¬ductance Stress, 2-D (Two Dimensional) |
Issue Date: | 2000 |
Publisher: | Journal of Science and Technology |
Citation: | Journal of Science and Technology,Vol 20, No.1,2 & 3 |
Abstract: | A DC stress analysis has been performed to assess the reliability of delta-doped and conventional MOSFET's. The experimental results and 2-D Computer simulations indicate that there is little variations in the threshold voltage, trans-conductance and draw current m the delta-MOSFET due to stress than in the conventional MOSFET. |
Description: | Article Published in the Journal of Science and Technology, Vol.20, No.1,2&3 2000. |
URI: | http://hdl.handle.net/123456789/5028 |
Appears in Collections: | Journal of Science and Technology 1988 -1999
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