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Please use this identifier to cite or link to this item: http://hdl.handle.net/123456789/5060

Title: Study of Hot-Carrier Induced Degradation in Delta-Doped and Conventional Mosfets.
Authors: Diawuo, K.
Keywords: Reliability
Delta-doped
Conventional,
MOSFET
Subthreshold
Transconductance,
stress
2-D (Two Dimensional)
Issue Date: 2000
Publisher: Journal of Science and Technology
Citation: Journal of Science and Technology, Vol. 20, Nos 1,2 & 3 2000. pp 118-123
Abstract: A DC stress analysis has been performed to assess the reliability of delta-doped and conventional MOSFETs. The experimental results and 2-D computer simulations indicate that there is little variations in the threshold voltage, trans-conductance and drain current in the delta- MOSFET due to stress than in the conventional MOSFET
Description: Article published in the Journal of Science and Technology, Vol. 20, Nos 1,2 & 3 2000. pp 118-123
URI: http://hdl.handle.net/123456789/5060
Appears in Collections:Journal of Science and Technology 2000-

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