POWER OUTPUT OF A1/SnO2/n-Si SOLAR CELL
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Date
1996
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Pergamon
Abstract
An Al/SnO2/n-Si solar cell from n-type silicon (6.5 f~-cm, (100)) wafers using chemical vapour
deposition (CVD) has been fabricated. The fabrication details, I-V characteristics determining conversionefficiency
(r/max), open circuit voltage (Voc) and short circuit current (lsc) have been presented. A maximum
conversion efficiency of 6.3% for an unencapsulated cell of area 85.20 mrn 2 has been obtained
Description
This article is published by Pergamon 1996 and is also available at https://www.sciencedirect.com/science/article/abs/pii/0038092X96002897
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Citation
Solar Energy Vol. 56, No. 4, pp. 343-348, 1996 Copyright © 1996 Elsevier Science Ltd